Abstract
We consider the cause of different behavior of effective work function of gate metals after high and low temperature treatments. After high temperature treatment, reaction between Hf-based high-k dielectrics and a Si substrate generates oxygen vacancies (Vo) in high-k dielectrics, which leads to the subsequent electron transfer from Vo to gate metals. As a result, effective work function of gate metals becomes small and Fermi level pinning of gate metals occurs. Thus, Fermi level pinning is unavoidable phenomena for gate-first- processes. On the other hand, intrinsic hybridization between metal and high-k wave function at the interface is crucial factor to determine effective work function of gate metals after low temperature treatment. Accordingly, interface structures and band structures of metals govern the intrinsic effective work functions of metals.
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