Abstract
Indium adsorption on Ge(310) has been studied using the DV-Xα method. The most stable adsorption site is determined. The calculated occupied-state and unoccupied-state STM plots are given. Although the plots are proportional to the currents at a constant tip height, we compare our calculated plots with experimental images to verify the possible structure of Ge(310) on which In and Ge were adsorbed. We also conclude that the weaker maximum in the unoccupied-state image is contributed by a Ge adatom.
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