Theoretical simulation of the long-wave HgCdTe detector for ultra fast response-operating under zero bias condition and room temperature

Abstract

The paper reports on the long-wave (λc = 8.05−11 μm) HgCdTe (Cd composition, xCd = 0.17−0.2) infrared detector for ultra short response time operating for unbiased condition and room temperature (300 K). The optimal structure in terms of the short response time versus device architecture was shown. The response time of the long-wave (xCd = 0.17−0.2) HgCdTe detector for 300 K was calculated at the level of τs ~ 400−440 ns for zero bias condition and lack of the extra series resistance. It was presented that extra series resistance related to the processing (in the range ~ 0−20 Ω) extends response time within the range τs ~ 650−800 ps for active layer xCd = 0.2.