Theoretical research on enhancement and adjustment of Spin Hall effect of light based on InSb

Abstract

In this paper, to realize the tailored Spin Hall effect of light (SHEL) which can be controlled by the temperature, the external magnetic field, and the distribution of the external magnetic field, respectively, and further enhance the horizontal and vertical displacements, an engineering structure is designed which is composed of glass, InSb, and air layers. We firstly manipulate the temperature of the InSb layer every 10 K from 160 to 200 K, the horizontal displacement first becomes larger and reaches its maximum at 180 K, which is about 150 μm, and then it becomes smaller when the temperature is larger than 180 K. Then, the value of the external magnetic field has been changed every 0.2 T from 1 to 1.8 T, and the horizontal displacement reaches the maximum at 1.2 T, which is about 648 μm. The thickness of the InSb layer has also been altered every 5 μm from 10 to 30 μm, and the horizontal displacement reaches the maximum at d = 15 μm, which is about 150 μm. Finally, the effects of the distributions of the external magnetic field on the SHEL have been investigated, two other different magnetic field distributions are adopted. One is B = 1 + 1000d (T), and another is B = 1 + ed (T). The results demonstrate that the horizontal and vertical displacements can be tuned obviously. Based on the above analyses, we figure out that the structure can adjust and enhance significantly the behavior of SHEL, and those obtained results are of great help to develop practical application integrated circuit devices in spin-based nano-photons.