Abstract
Theoretical calculation of the ratio of hot electron current to thermal electron current in scanning hot electron microscopy (SHEM) is reported by modeling the sample-tip structure as a plane-sphere structure. The effects of hot electron energy, gap separation, and applied bias between the tip and the sample surface on the ratio are investigated. Comparison of the results of theoretical calculation and those obtained from SHEM experiment on a double-barrier resonant tunneling diode of an InGaAs/AlAs heterostructure emitter reveals agreement in the detected amplitude and the tendency of change of the hot electron current.
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