Abstract
Theoretical calculation of the ratio of hot electron current to thermal electron current in scanning hot electron microscopy (SHEM) is reported by modeling the sample-tip structure as a plane-sphere structure. The effects of hot electron energy, gap separation, and applied bias between the tip and the sample surface on the ratio are investigated. Comparison of the results of theoretical calculation and those obtained from SHEM experiment on a double-barrier resonant tunneling diode of an InGaAs/AlAs heterostructure emitter reveals agreement in the detected amplitude and the tendency of change of the hot electron current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.