Abstract
We review a new valence control method of codoping for the fabrication of low-resistivity p-type GaN, AlN, ZnSe, ZnO and CuInS2, which is proposed by ab initio electronic structure calculations. We propose the following codoping method (using both n- and p-type reactive dopants at the same time) to fabricate a low-resistivity p-type semiconductors; (1) GaN: [SiGa+2MgGa(or BeGa), H+2MgGa(or BeGa), and ON+2MgGa(or BeGa)], (2) AlN:[ON+2CN], (3) ZnO:[GaZn+2NO, AlZn+2NO and InZn+2NO, (4) ZnSe:[InZn+2NSe, ClSe+2NSe, 2LiZn+ClSe (or ISe), and TeSe+2NSe] and (5) CuInS2:[VCu+InCu+2P]. We compare our predictions of codoping with the recent sucessful codoping experiments for the fabrication of the low-resistivity p-type wide band-gap semiconductors.
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