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Abstract
We have investigated the radiation-induced segregation (RIS) near a grain boundary in an Fe-Cr-Ni alloy under electron irradiation taking account of the evolution of faulted dislocation loops and network dislocations. First, we predicted, on the basis of the rate theory, the formation dislocation-free zone (DLFZ) in the vicinity (about 30 nm) of a grain boundary and then carried out direct observation of the DLFZ by in-situ irradiation with high-voltage electron microscopy. The inter-relationship between RIS and heterogeneous defect clustering near a grain boundary has been substantially clarified.
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