Abstract
Exciton-photon interaction in strong coupling region is an interesting topic in exploring bosonic physics and devices. Until now, however, InGaN based exciton polariton was rarely reported since its large inhomogeneous broadening. In this study, the impact of inhomogeneous broadening Γinh of InGaN/GaN quantum wells (QWs) on the normal mode energy splitting ΩNMS, between the upper and lower polariton branches was theoretically analyzed by transfer matrix method and linear nonlocal dispersion model. Surprisingly, an optimal inhomogeneous broadening Γopt, corresponding to the maximum value of ΩNMS was deprived at low temperature, which has not been reported before. The effect of Γinh was divided into two regions for explaining the existence of Γopt. Meanwhile, the Γopt was found to be strongly correlated with the oscillator strength and homogeneous broadening.
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