Abstract
An elementary model, independent sheet simulation of photochemical vapor deposition (ISSPCVD), is introduced that illustrates the roles of chemical reactions and transport in photochemical vapor deposition (photo-CVD). A simple model for diffusion and integration of a small number of chemical reaction rate equations allows simulations of SiO2 photo-CVD to be performed, and this work shows that it is possible to assume that one SiOxHy intermediate is the dominant precursor to SiO2 deposition. Three oxidants for use with SiH4 are investigated: O2, H2O/O2, and H2O2. The simulations allow determination of concentrations of important gas-phase species and estimated deposition rates as functions of time, probability of gas-phase species diffusing to the substrate and effective reaction chain length as functions of height, and deposition rate dependence on purge gas identity and vacuum ultraviolet light intensity. The results reflect our experimental results, including the dependence of deposition rate on exper...
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