Abstract
We developed a theoretical model based on 8-band k.p method to calculate the temperature-dependent band structure of GexSn1-x/Ge quantum well. The E-k dispersion relation is calculated using two different sets of Luttinger-Kohn’s Hamiltonian effective mass parameters. The spontaneous emission rate spectra including and excluding the contribution of indirect L subbands are compared. Instead of the expected direct band-gap energy transition, we observe indirect band-gap energy transitions which are verified by having abnormal temperature-dependent spontaneous emission rate even for large Sn fraction up to 24%. This phenomenon can be explained by the effect of quantum restriction and build-in compressive strain through our model which are the main obstacles for realizing direct band-gap GeSn/Ge quantum well.
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