Abstract
An analysis of the effects of radiation damage in SiO2 is made within the framework of the valence-bond approximation. According to this model, the less energetic and intense satellite in the oxygen Ka emission spectrum results from the breaking of an Si–O bond. The calculated energy separation and intensity ratio of the two lines agree favorably with experiment. The model further indicates that the end result of the radiative processes is the production of transient paramagnetic point defects in the pure material and permanent defects in the impure material. In this sense, this model goes a step further than the usual molecular orbital or band pictures in that it provides a different description of the ionized and un-ionized states. Some implications of these conclusions are discussed in detail.
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