Theoretical Model And Computer Simulation Results Of Enhanced Diffusion Of High-Temperature Implanted Aluminum In Silicon Carbide

Abstract

AbstractWide applications of silicon carbide (SiC) films in microelectronics devices make especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic kinetic model of enhanced diffusion of aluminum in SiC films during ion bombardment at high temperatures has been considered. The set of equations describing the kinetic model takes into account generation Vc and Csi vacancies during bombardment, migration of mobile species (Al) toward the surface and reactions of Al atoms with Vc and Vsi vacancies, as well as Al evolution from the film. The calculations were carried out for the flux of Al ions with energy 40 keV and current density 20 μA/cm2 to a dose 2 1016 cm−2 at 1800° C. The calculations have shown that the Al content in SiC at these condition does not exceed 40%. The calculation profile of Al is in a good agreement with experimental data [1].