Theoretical Maximum Thermoelectric Performance of p‐Type Hf‐ and Zr‐Doped NbFeSb Half‐Heusler Compounds

Abstract

AbstractHalf‐Heusler compounds are promising materials for thermoelectric applications due to their high zT at elevated temperatures. However, their intrinsic high thermal conductivity limits their efficiency. Doping with Hf or Zr can improve the zT of these materials. Recently, a high zT of 1.5 at 1200 K achieved in p‐type Nb1‐xHfxFeSb has attracted much attention. While the effect of doping Hf in thermal conductivity is studied thoroughly, the effect of Hf doping on band parameters is not fully evaluated. This study investigates the effect of Hf and Zr doping on the electronic band parameters and thermoelectric properties of NbFeSb using the Single Parabolic Band model. The results show that Hf doping increases the weighted mobility of the samples, while Zr doping has no significant effect. Hf doping with x = 0.14 is predicted to improve the zT of NbFeSb by 35% at 300 K (0.19 → 0.26). These results show the intricate effects of Hf and Zr doping on the electronic and thermal properties of NbFeSb.