Abstract
Dipole transition moment (DTM) of a hydrogenic donor in a spherical quantum dot of GaAs – Ga1-xAlxAs system with finite barrier confinement is obtained. The variational approach within the effective mass approximation is used as the framework for the calculation of donor ionization energy for a few excited states in quantum dot. Calculations of the DTM of an on-center shallow donor hydrogenic impurity in a GaAs quantum dot under hydrostatic pressure are presented. A linear increase in the DTM has been observed, when the dot radius increases from 2 nm to 100 nm. The important conclusions arrived at are (i) ionization energy increases and attains a maximum value occurring for a dot radius of 5 nm, after which the ionization energy decreases gradually as the dot radius increases; (ii) ionization energy for the ground state (1s) is high compared to the excited states (1p and 1d states) and (iii) a linear trend for 1p–1d transition is obtained.
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