Abstract
A basic analysis of complex-coupled distributed-feedback semiconductor lasers with stepwise constant coupling coefficients κ is derived. Solving coupled-wave equations at threshold reveals that the longitudinal distribution of κ as well as the relative amount of index and gain coupling plays a decisive role in the modal and spatial (internal fields) properties of complex-coupled structures. The standing-wave effect, extended to multisection devices, and the concept of apparent absorption induced by spatially dependent κ can explain the discrepancies between uniformly and nonuniformly complex-coupled structures. The complex-coupling profile is also discussed with respect to its influence on spatial hole burning and threshold gain margin, the usual criteria for optimizing sources in optical fiber telecommunication systems.
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