Abstract
The probability for surface atomic recombination of a single gas is theoretically investigated, for a system that takes into account atomic adsorption in physisorption and chemisorption sites, surface desorption, surface diffusion, and both Eley–Rideal (E–R) and Langmuir–Hinshelwood (L–H) recombination mechanisms. Analytic asymptotic solutions are obtained for the value of the recombination probability and are validated by their comparison with numeric calculations for the system of equations describing the same sequence of elementary processes. The dependence of the recombination probability on the value of the wall temperature is analysed in detail.
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