Abstract
We study the excitation and ionization processes at the isolated substitutional vanadium impurity in GaAs. The electronic structure is solved through the spin-restricted version of the multiple-scattering X\ensuremath{\alpha} method to obtain the relevant mean-field energies, and correlation effects are evaluated through the Fazzio-Caldas-Zunger multiplet approach. The similar systems GaP:V, InP:V are also investigated. Our results for GaAs:V point to the occurrence of an acceptor level at \ensuremath{\sim}${E}_{c}$-0.16 eV, the donor level appearing very close to or within the valence band. The V-related midgap acceptor should then be related to some complex defect involving vanadium. We also suggest that ${\mathrm{V}}^{2+}$ in these compounds is present in the low-spin ground state $^{2}\mathrm{E}$..AE
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