Abstract
The effect of incomplete ionization of dopants on p+nn-n+ 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes has been investigated. Breakdown voltage, avalanche region width, DC to RF conversion efficiency and RF output power of the 4H-SiC IMPATT device with incomplete and complete ionization are given at different temperatures. Theoretical analysis reveals that the influence of the incomplete ionization of dopants on the performance of the p+nn-n+ 4H-SiC IMPATT devices cannot be ignored.
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