Abstract
Nanometer-scale, single-gate graphene nanoribbon Schottky barrier field-effect transistors (FETs) were theoretically investigated using self-consistent atomistic simulation. The device geometry was determined by referring to the International Technology Roadmap for Semiconductors. The target performance levels were the requirements specified in the roadmap for 2024, particularly a maximum leakage current of 0.1 A/m, an on-current of 2017 A/m, and a delay time of 0.13 ps. The device conditions needed to meet these requirements were found to be a bandgap larger than 1.1 eV, a supply voltage of 0.6 V, and a gate length of 7 nm.
Published Version
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