Abstract
Graphene offers new field-effect transistors with great capabilities, including fast switching speed, reconfigurability, and so on, which are suitable for other electronic devices. In order to analyze and design such devices, it is necessary to study a metal–graphene-dielectric-semiconductor–metal (MGDSM) stack. To accomplish this purpose, a physisorbed graphene strip is investigated to characterize the interaction of graphene with particular metals. Then, the MGDSM stack is examined for different regimes, and in addition, the quantum capacitance of graphene is employed to highlight its presence for computing the C-V curve regarding the stack. In this regard, the work function of the constituting materials is selected according to the reported experimental data in the literature to achieve a realistic C-V curve. This stack can be served as the building block for switching operation; consequently, it will have a fundamental role in designing high-speed transistors. Finally, the calculated C-V curve is compared with an experimental one that the calculated results are pretty close to the expected values.
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