Abstract
The impacts of backgate-biasing (K BS ) on the performance of ultrathin-body (UTB) GeSn homo- and GeSn/SiGeSn type-II hetero-TFET are investigated via numerical simulation. A negative shift of onset voltage (K ONSET ) is observed in both devices with K BS varying from −1 V to 1 V. Negative K BS provides higher on-state current (/ ON ) and steeper subthreshold swing (SS), as compared with the devices under K bs ≥ 0 V. This is due to the higher carrier generation rate and shorter tunneling path induced by negative K BS . Under the same backgate-bias condition, improved I ON , SS, and ambipolar characteristics are demonstrated in the hetero-TFETs over the homo devices.
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