Abstract
We present a new theoretical design for diode lasers which should be capable of generating sub-100-ps pulses with pulse energies of more than 10 nJ per 100-μm-contact width by active Q-switching. We show that the carrier-induced reduction of the refractive index in the active layer, i.e. the vertical anti-index guiding effect, results in a dependence of the optical confinement factor on the carrier density which can be exploited for a further enhancement of the pulse energy and a reduction of the pulse length.
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