Abstract
This paper investigates, theoretically, the migration potential and adsorption energies of Ga adatoms on a reconstructed As-rich GaAs (001)-(2 × 4) surface by ab initio calculation. The calculated results show that migration potential depends sensitively on the number of surface Ga adatoms and that the adsorption energy oscillates with the adsorption of every other atom. The dependence on the number of surface Ga atoms is explained by the effects of the surface distortion and the electron counting model. This paper also discusses As incorporation during epitaxial growth and demonstrates the dynamical behavior of Ga adatoms at finite temperature by Monte-Carlo simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
