Abstract
The capacitance-voltage characteristics of hydrogenated amorphous silicon Schottky barriers were calculated for typical cases of the gap-state density distributions in this material. It is demonstrated that the slope of a C-2 vs V plot provides the ionized state density associated with the gap-state distribution near the midgap and that the built-in potential in the barrier can be determined from the characteristic energy of gap states and the intercept voltage defined by extrapolating the straight line of the C-2 vs V plot at large reverse bias voltages.
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