Abstract
Structural and electronic properties of Sc-decorated black phosphorus (SP) and its gas sensing for NO molecule were investigated using density functional theory with the emphasis on the response to applied strain. It found that SP transformed into indirect bandgap semiconductor, and converted into a metal characteristic under strain. SP showed strong interaction with the NO with a high adsorption energy of −2.92 eV since the orbital hybridization and extensive charge transfer, and exhibited 3.3-fold sensitivity compared to black phosphorus, suggesting that SP was a potential NO sensor. Furthermore, strain engineering provided an effective route to facilitate the desorption of NO.
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