Theoretical insights into size and dielectric confinement: Unraveling real and imaginary parts of the effective complex dielectric function in spherical multilayered quantum dots with oxide interfaces

Abstract

A quantitative numerical exploration is conducted to scrutinize the combined effects of size and dielectric confinement consequences on the electronic and optical characteristics of spherical multilayered quantum dot CdSe/ZnS/CdSe/ZnS (SMLQD) and its inverted configuration ZnS/CdSe/ZnS/CdSe (ISMLQD) buried into two oxides: HfO2 and SiO2. By employing the effective mass approximation (EMA) and the density matrix approach (DMA), the derived quantized electron energy states and their associated wave functions were obtained by solving the Schrödinger equation in a spherical coordinates. The dipole transition element, both real and imaginary parts of the effective complex dielectric function (ECDF) as well as its linear, nonlinear and total counterparts are brought out for various values of inner core radii, number density of QDs and incident photon intensity. In addition, a specific analysis of electron probability distributions is provided to gain a clearer understanding of the underlying physical factors. Our findings point to a notable influence of these mentionned factors on the computed coefficients. The study unveils that the dielectric mismatch occurring at the system/oxide interfaces plays a crucial role in modifying the electronic structure and a substantial impact on both linear and third-order nonlinear components is witnessed.