Abstract
We performed multi-band–multi-channel transport calculations within the framework of empirical tight binding on triple barrier metal(CoSi 2)/insulator(CaF 2) resonant tunneling diodes. The incorporation of realistic band structures turned out to be important for an adequate description, since the peak transport occurs far from the Γ-point. The observed resonances are predicted to be relatively stable to well-thickness fluctuations, but depend sensitively on barriers.
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