Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Abstract

Abstract In this work, we used the numerical simulation method to study the tunnel oxide passivated carrier-selective contacts (TOPCon) structured solar cells, with the focus especially on the paths towards excellent surface passivation and low contact resistance. The presence of an ultra-thin silicon oxide (SiO2) with high quality (typically low interface-states density, Dit ≈ 1 × 1010 cm−2 eV−1 and low pinhole density, Dph 84%), a minimum forward-bias saturated tunneling current of about 0.01 A/cm2, more favorable of 0.1 A/cm2, is required for the Si/SiO2/n+-Si structure. Generally, our work offers an improved understanding of tunnel oxide, doping layer and their combined effects on TOPCon solar cells. Besides simulation, we also discuss the practical manufactures of how to control the above mentioned parameters, as well as the problems needed to be solved for further work.