Abstract
Expressions for the net generation rate of electron-hole pairs under illumination and the ideal Current-voltage ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J-V</tex> ) characteristics of a specific type of thin-film solar cell are derived. The thin-film configuration consists of an n- on p-type semiconductor with a rough upper surface (which is approximated by a distribution of smooth microscopic surfaces or facets randomly oriented) and a diffusive, perfectly reflecting lower surface. This configuration leads to a significant enhancement of the radiation flux in the film and theoretically to a higher collection probability and conversion efficiency compared to the conventional solar cell based on a much thicker crystalline film. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J-V</tex> characteristics are finally expressed in terms of a set of double integrals in a form suitable for numerical analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
