Theoretical calculation of the properties of two-dimensional holes in doping superlattices

Abstract

Two-dimensional properties, in particular, the density-of-states masses of holes in silicon and germanium doping superlattices, are determined by using self-consistent calculations and the effective mass approximation. Physical parameters of the doping superlattice such as the doping level of the n-type layers and the thickness and doping level of the p-type layers are varied to determine their effects on the hole mass characteristics as a function of hole concentration. Very high doping levels of the p-type layers of the superlattice are used to avoid the problem of the freezing out of the hole carriers at absolute zero temperature. It is determined that the doping level of the p-type layers is the leading parameter that affects the hole mass characteristics.