Abstract
We calculated the well-plane valence band structures and the optical gain in InxGa1−xAs/InP quantum wells under both biaxially compressive and tensile strain using 4×4 Luttinger–Kohn Hamiltonian matrix [ Phys. Rev. 97, 869 (1955)]. We show that tensile strain can improve the 1.5-μm laser performance as well as compressive strain due to the high joint density of states and the large TM-mode optical matrix element between the ground-state conduction and light-hole subbands.
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