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Abstract
The integrated intensity of the optical-absorption spectrum of ground-state electron-heavy-hole exciton resonances in III-V and II-VI semiconductor quantum wells is calculated based on an effective-mass approximation. The intensity increased significantly with the band gap of the well materials, primarily due to the shrinkage of the two-dimensional exciton radius. This result shows the high potential of wide-gap II-VI semiconductor quantum wells for optoelectronic devices.
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