Abstract

Longitudinal projected range, energy losses, and sputtering yield are calculated of silicon
 target that bombarded with inert ion gases such as He, Ne, Ar, Kr, and Xe using SRIM package.
 Obtained results show increasing of longitudinal projected range with ion energy and decreasing
 with incident ion mass. The energy losses originated by the nuclear and electronic depending on ion
 ranges, generally at low ion energy the nuclear stopping power is dominated in comparison with the
 electronic stopping power, and the range of domination varies with changing ion species. Further,
 the sputtering yield founded, increasing with ion energy up to maximum value then tending to
 decrease, as well as it increases with increasing ion incident angle and decreases with decreasing ion
 mass.

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