Abstract
The behavior of semiconductor-based, light-activated microelectrodes in redox electrolytes has been examined theoretically using commercial software to self-consistently solve the transport equations for solid-state and solution-phase species and the electrostatic potential within the semiconductor phase, subject to the appropriate boundary conditions under steady state. The lightlimited currents for such spatially localized microelectrodes, observed for a high voltage bias, bias, under normal irradiation and a strict axisymmetric geometry, were proportional to the photon flux intensity. The results of these simulations afforded strong evidence that under high bias, holes generated by the light on an n-type semiconductor escape beyond the edge of the illuminated disk, leading to a net increase in the predicted current and thus in the effective area of the light-activated microelectrode.
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