Theoretical aspects of direct conversion of radio-chemical energy in electric by radiation-stimulated SiC*/Si heterostructure

Abstract

The authors consider their own CVD technology for the SiC growing on a Si substrate in order to create a beta converter. Since the beta converter contains a heavy C-14 atom, the finished beta converter works as an ”inner sun”, and the structure has specific mark * in the name: SiC*/Si. Authors focus on the problems of the theoretical description of: 1) the growth of the SiC*/Si film (with C-14 atoms inside) and the position of the p-n junction in the doping process; 2) method of a placement radioisotopes into a semiconductor material; 3) physical properties of radioisotopes; 4) defects formation; 5) generation of secondary electrons in the region of the p-n junction.