Abstract
The transition levels of oxygen vacancy (Vo) in GeO2 with different charge state are calculated by first principle method. The formation energy of GeO2 indicate there is a (+2/0) fix charge state in bulk GeO2. The (+1/0) transition level near Ge valence band maximum which shows positive charge trap of GeO2. We demonstrate a Ge MOS capacitor with thermal oxidation. The hysteresis of CV shows a negative Vfb shift which correspond to the positive charge trap as theoretical calculation imply.
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