Abstract
AbstractThe metal mask method is widely used for preparing diamond nanowires but has the problem of random structure distribution and inaccurate size control. This paper presents the first‐principle calculations for Al atoms’ adsorption and migration behavior on diamond surfaces. The results show that the adsorption energy of Al atom is 0.2 eV, and the activation energy is 0.01 eV, resulting in the instability of the diamond/Al interface. The metal Al at the interface forms nanospheres at high temperatures. Similarly, its size and distribution depend on the diamond surface topography. Therefore, the anodic aluminum oxide template micro‐etching method is adopted to improve the metal mask preparation method and realize diamond nanoarrays’ size and distribution control.
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