Abstract
A theoretical model is developed which allows to describe the defect evolution in silicon carbide implanted with high doses of nitrogen and aluminium ions and subsequently annealed to form a solid solution. The diffusion of defects, the formation of complexes of defect clusters and the influence of the internal elastic stress fields produced by the implanted ions and the complexes formed are taken into account. Results from the simulations have been correlated with data obtained by Rutherford backscattering spectrometry/ion channelling (RBS/C).
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