Abstract
To obtain high performance In Ga As P visible laser diodes, suitable composition z of Ga As1-zPz substrate is theoretically anlyzed with the approximation of k-selection rule. New approximative method is presented to evaluate the electron mobility in each valley. Keeping a band gap of active layer constant, 1.92 e V, a As0.7P0.3 substrate is found to be most suitable for fabrications of visible laser diodes. These devices are applicable to optical communication with plastic optical fibers.
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