Abstract
By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green’s function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ON-current of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (gm) and unity-gain frequency (ft).
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