Abstract
A detailed analytical calculation of the photoelectric quantum yield in Schottky diodes is presented. The transport of carriers in the surface space charge region is treated explicitly, taking account of photogeneration, diffusion and drift in the non-uniform electric field. Boundary conditions at the interface are expressed in terms of surface recombination velocity and emission velocity of excess carriers into the metal. It is shown that the metal-semiconductor interface strongly affects the collection efficiency of short wavelength generated electron-hole pairs. This effect basically originates in the emission flux of majority carriers into the metal. Current, charge carriers distributions and quantum yields are computed using the data of AuCdTe Schottky barriers.
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