Abstract
The drift velocity of hot electrons in an n-GaAs quantum well is calculated with the exact distribution function deduced from the Boltzmann integral equation. The interaction of the charge carriers with surface and bulk polar optical phonons and ionized impurities is considered in the calculation. The influence of intercarrier collisions as well as the quantum-well width on the distribution function and on the drift velocity is analyzed systematically. The theoretical results are compared with recent experimental data deduced from pulsed Hall measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
