Abstract
The strain‐induced growth of self‐induced GaN nanorods (NRs) on the sapphire substrate is investigated experimentally. From cathodoluminescence (CL) results, it is noticed that the distributions of the flower‐shaped pattern are varied with the increment in NR height. Based on the experimental observation, a simulation model for NR formation is established, which is in good agreement with the experimental data. Then, the preferred nucleation position for adatom deposition in the NR growth process is theoretically analyzed. Finally, an equilibrium growth condition for the vapor–solid (VS) and vapor–liquid–solid (VLS) mechanism of GaN NR growth is proposed.
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