Abstract
We comprehensively investigate the energy band diagrams, carrier distribution, spontaneous emission rate rsp, and the internal quantum efficiency ηIQE in the lattice-matched GeSn/SiGeSn double heterostructure light-emitting diode (LED) wrapped in a Si3N4 liner stressor. The large tensile strain introduced into the device by the expansion of the Si3N4 liner is characterized by numerical simulation. A lower Sn composition required for the indirect to direct bandgap transition and a higher ratio of the electron occupation probability in the Γ conduction valley are achieved in the tensile strained GeSn/SiGeSn LED in comparison with the relaxed device. Analytical calculation shows that the tensile strained LED wrapped in the Si3N4 liner stressor exhibits the improved rsp and ηIQE compared to the relaxed device. rsp and ηIQE also can be enhanced by increasing Sn composition, carrier injection density, and n-type doping concentration in the GeSn active layer.
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