Abstract
A complementary metal oxide semiconductor (CMOS) compatible photonic-plasmonic waveguide with nanoscale dimensions and better optical confinement has been proposed for the infrared (IR)–band applications. The design is based on the multi-layer hybrid plasmonic waveguide (Si–SiO2–Au) structure. The 3D-finite element method (FEM)–based numerical simulations of single slot hybrid plasmonic waveguide (HPWG) confirms 2.5 dB/cm propagation loss and 15 μm−2 confined intensity. Moreover, its application as dual-slot nanograting is studied with higher propagation length and ultra–low–dispersion near the 1550–nm wavelength. The proposed low-dispersion nanoscale grating design is suitable for future lab–on–chip nanophotonic integrated circuits.
Highlights
Nowadays, CMOS technology make it possible to realize the ultrafast transistor with feature size less than 20nm
Abstract a CMOS compatible photonic-plasmonic waveguide with nanoscale optical confinement has been proposed for the infrared (IR)-band applications
The design is based on the multilayer hybrid plasmonic waveguide (Si-SiO2-Au) structure
Summary
CMOS technology make it possible to realize the ultrafast transistor with feature size less than 20nm. The 3D-finite element method (FEM) numerical simulation of single slot HPWG confirms 2.5 dB/cm propagation loss and 15 um− 2 confined intensity. Its application as dual-slot nanograting is studied which shows better propagation length and ultra-low dispersion near the 1550 nm wavelength.
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