Abstract

A complementary metal oxide semiconductor (CMOS) compatible photonic-plasmonic waveguide with nanoscale dimensions and better optical confinement has been proposed for the infrared (IR)–band applications. The design is based on the multi-layer hybrid plasmonic waveguide (Si–SiO2–Au) structure. The 3D-finite element method (FEM)–based numerical simulations of single slot hybrid plasmonic waveguide (HPWG) confirms 2.5 dB/cm propagation loss and 15 μm−2 confined intensity. Moreover, its application as dual-slot nanograting is studied with higher propagation length and ultra–low–dispersion near the 1550–nm wavelength. The proposed low-dispersion nanoscale grating design is suitable for future lab–on–chip nanophotonic integrated circuits.

Highlights

  • Nowadays, CMOS technology make it possible to realize the ultrafast transistor with feature size less than 20nm

  • Abstract a CMOS compatible photonic-plasmonic waveguide with nanoscale optical confinement has been proposed for the infrared (IR)-band applications

  • The design is based on the multilayer hybrid plasmonic waveguide (Si-SiO2-Au) structure

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Summary

Introduction

CMOS technology make it possible to realize the ultrafast transistor with feature size less than 20nm. The 3D-finite element method (FEM) numerical simulation of single slot HPWG confirms 2.5 dB/cm propagation loss and 15 um− 2 confined intensity. Its application as dual-slot nanograting is studied which shows better propagation length and ultra-low dispersion near the 1550 nm wavelength.

Results
Conclusion

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