Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

Siyu Cao,Shuai Feng,Yue Zhao,Lichun Zhang,Chuanbo Li,Yuhua Zuo,Buwen Cheng

doi:10.1186/s11671-018-2827-4

Abstract

Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.

Highlights

In0.53Ga0.47As/In0.52Al0.48As and InGaAs/InP avalanche photodiodes (APDs) are the most significant photodetectors for shortwave infrared detection
Compared with APDs operating in linear mode, APDs operated in Geiger mode as Single-photon avalanche photodiode (SPAD) are applied with a reverse bias that exceeds the breakdown voltage [6]
SPADs achieve a high gain in the multiplication layer, and a single photon can trigger a macroscopic current pulse, which provides the ability to accurately sense the arrival at the detector of a single photon [7]

Summary

Introduction

In0.53Ga0.47As/In0.52Al0.48As (hereafter referred to as InGaAs/InAlAs) and InGaAs/InP avalanche photodiodes (APDs) are the most significant photodetectors for shortwave infrared detection. Research on quantum key distribution has quickly progressed, and InGaAs/InAlAs and InGaAs/InP APDs can realize the single-photon counting and timing as single-photon APDs (SPADs) [1]. Compared with other single-photon detectors in the SWIR wavelength range, such as photomultiplier tubes, InGaAs single-photon avalanche diodes have the distinctive advantages of high performance, high reliability, low bias, small size, good time resolution, and ease of operation [2, 3]. InGaAs/InAlAs and InGaAs/InP APDs are attracting the considerable attentions [4, 5]. The absorption wavelength can be controlled by the materials of absorption layer [9]

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Conclusion