Abstract
ABSTRACTPEBA induced thermal effects in GaAs and InP have been simulated. Monte-Carlo calculation has been used to determine universal electron energy loss functions in the 5–50 keV energy range for these materials. Similar electron depth-dose profiles of a polykinetic electron beam pulse is deduced in both GaAs and lnP. A simple adiabatic approach is sufficient to establish relationship between melting depths and fluences. Thermal effects homogeneity and surface degradation are discussed for both crystalline and amorphous materials using variable electron energy deposition profiles. Correlation is made between experimentally measured degradation thresholds and calculated fluence windows within which melting effects are expected.
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