Abstract
The minority electron transport in p-type GaAs with hole concentrations greater than 1020 cm-3 was investigated using the Monte Carlo method. It is found that electron-hole and the plasmon scatterings play a dominant role in heavily doped p-type GaAs. The estimated electron mobility and diffusion length are in good agreement with the experimentally obtained values. Based on the above, the static and high-frequency characteristics of AlGaAs/GaAs HBT's were analyzed. The band gap narrowing and the Auger recombination are found to induce substantial effects on the current gain. The maximum frequency of oscillation of 440 GHz and the propagation delay time of 1.5 ps/gate are predicted for the base doping of 1×1021 cm-3.
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