Abstract
The high-energy electronic-impact excitation cross section isdirectly proportional to the generalized oscillator strength (GOS) ofthe target atom. The generalized oscillator strengths of helium atomfrom the ground state to the excited states (21S, 21P and 31D) arecalculated using the updated R-matrix codes within the first Bornapproximation. Our calculation results are in good agreement with theprevious theoretical and experimental results at high incidentenergies. In order to treat the bound–bound and bound–continuumtransitions in a unified manner, the GOSdensity is defined based on the quantum defect theory. We calculate theGOS densities of 1S, 1P and 1Dchannels, namely the complete high-energy collision cross sections ofelectronic-impact excitations into all the n1S, n1P and n1Dexcited states. In addition to high-energy excitation cross sections, ascheme to calculate the excitation cross sections for entireincident energy range is discussed.
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